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Same model may have multiple batches, images only for reference.
SIS472DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS472DN-T1-GE3

Part No SIS472DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 1212-8
Datasheet
SIS472DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 997pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064669-SIS472DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIS472DN-T1-GE3 CAD Model

Description

The SIS472DN-T1-GE3 is a MOSFET manufactured by Vishay.

  • Package: PowerPAK 1212-8
  • Applications: discrete semiconductor products
  • Maximum Rds On at Id, Vgs: 8.9 mOhm @ 15A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced
  • Win Source Part Number: 064669-SIS472DN-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2913 $50.9775
420+ $0.2390 $100.3800
650+ $0.2315 $150.4750
895+ $0.2241 $200.5695
1,155+ $0.2166 $250.1730
1,545+ $0.1942 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,900 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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