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Same model may have multiple batches, images only for reference.
SIS626DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS626DN-T1-GE3

Part No SIS626DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 16A PPAK1212-8  /  N-Channel 25 V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet
SIS626DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 15 V
Power Dissipation (Max) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS626
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1006873-SIS626DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS626DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SIS626DN-T1-GE3 is a MOSFET designed for discrete semiconductor products.

  • FET Type: N-channel
  • Drain to Source Voltage: 25V
  • Continuous Drain Current: 16A (Tc)
  • Maximum Rds On: 9mOhm @ 10A, 10V
  • Maximum Vgs(th): 1.4V @ 250µA
  • Maximum Power Dissipation: 52W (Tc)
  • Gate Charge: 60 nC @ 10 V

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