The SISA01DN-T1-GE3 is a P-channel MOSFET transistor from Vishay's TrenchFET Gen IV series.

• Mounting Type: Surface mount
• Package: PowerPAK 1212-8
• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 22.4A @ ambient temperature and 60A @ case temperature
• Maximum On-Resistance (Rds On): 4.9mOhm @ 15A and 10V gate-source voltage (Vgs)
• Gate Charge (Qg): 84nC @ 10V
• Input Capacitance (Ciss): 3490pF @ 15V drain-source voltage (Vds)
• Maximum Power Dissipation: 3.7W @ ambient temperature and 52W @ case temperature
• Temperature Range: -55°C to 150°C