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SISA24DN-T1-GE3

Part No SISA24DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 10 V
Power Dissipation (Max) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA24
Other Names SISA24DN-T1-GE3CT,SISA24DN-T1-GE3TR,SISA24DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277661-SISA24DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA24DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SISA24DN-T1-GE3 is a popular electronic component that is part of the TrenchFET® Gen IV series.

  • Type: N-Channel MOSFET transistor
  • Drain to Source Voltage: 25V
  • Continuous Drain Current: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
  • Mounting: SMD (SMT)
  • Package: PowerPAK® 1212-8
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,368 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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