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Same model may have multiple batches, images only for reference.
SISF20DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISF20DN-T1-GE3

Part No SISF20DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SISF20DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs 13mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 30V
Power - Max 5.2W (Ta), 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 1212-8SCD
Supplier Device Package PowerPAK® 1212-8SCD
Base Product Number SISF20
Other Names SISF20DN-T1-GE3TR,SISF20DN-T1-GE3DKR,SISF20DN-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278497-SISF20DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISF20DN-T1-GE3 CAD Model

Description

This electronic component manufactured by Vishay Siliconix is a TrenchFET® Gen IV product designed for power management.

  • FET Type: Dual N-channel
  • Maximum Drain to Source Voltage: 60V
  • Maximum Rds On @ Id, Vgs: 13mOhm @ 7A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
  • Temperature Range: -55°C ~ 150°C (TJ)

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