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SISH116DN-T1-GE3

Part No SISH116DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH116
Other Names SISH116DN-T1-GE3CT,SISH116DN-T1-GE3TR,SISH116DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277600-SISH116DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH116DN-T1-GE3 CAD Model

Description

The SISH116DN-T1-GE3 is an N-channel MOSFET from Vishay.

  • Mounting: surface-mount device (SMD)
  • Power Dissipation: 1.5W (Ta)
  • Drain to Source Voltage (Vdss): 40V
  • Current Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Supplier Device Package: PowerPAK 1212-8SH
  • Temperature Range: -55°C to 150°C (TJ)
  • Usage: discrete semiconductor products

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