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Same model may have multiple batches, images only for reference.
SISS22LDN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS22LDN-T1-GE3

Part No SISS22LDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SISS22LDN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 30 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS22
Other Names 742-SISS22LDN-T1-GE3CT,742-SISS22LDN-T1-GE3TR,742-SISS22LDN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277616-SISS22LDN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS22LDN-T1-GE3 CAD Model

Description

The SISS22LDN-T1-GE3 is a N-channel MOSFET transistor from the Vishay Siliconix TrenchFET Gen IV series.

  • Drain to Source Voltage: 60 V
  • Continuous Drain Current: 25.5A @ 25°C
  • Maximum Rds On: 3.65mOhm @ 15A and 10V
  • Maximum Gate Charge: 56 nC @ 10 V
  • Package: PowerPAK 1212-8S
  • Packaging: tape and reel
  • Maximum Power Dissipation: 5W @ Ta and 65.7W @ Tc

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3482 $53.9280
95+ $1.1062 $105.0890
140+ $1.0716 $150.0240
195+ $1.0371 $202.2345
250+ $1.0025 $250.6250
335+ $0.8988 $301.0980
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Availability: 2,772 pieces
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