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SISS61DN-T1-GE3

Part No SISS61DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 8740 pF @ 10 V
Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS61
Other Names SISS61DN-T1-GE3CT,SISS61DN-T1-GE3DKR,SISS61DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277675-SISS61DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS61DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SISS61DN-T1-GE3 is a P-channel MOSFET with a drain to source voltage (Vdss) of 20 V and a current rating of 30.9A (Ta), 111.9A (Tc) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Package/Case: PowerPAK® 1212-8S
  • Gate Voltage (Vgs): ±8V
  • MSL Level: 1 (Unlimited)
  • Rating: AEC-Q200

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2389 $52.3890
24+ $4.2986 $103.1664
37+ $4.1642 $154.0754
50+ $4.0299 $201.4950
65+ $3.8956 $253.2140
86+ $3.4926 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,670 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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