The Vishay Siliconix 1140649-SIZ988DT-T1-GE3 is a Dual N-Channel MOSFET designed for use in Discrete Semiconductor Products, specifically Transistors-FETs, MOSFETs-Arrays. The package type is Tape & Reel and the standard package is 3,000. The FET type is 2 N-Channel (Dual) and the FET feature is Standard. The Drain to Source Voltage (Vdss) is 30V and the Current - Continuous Drain (Id) @ 25°C is 40A (Tc), 60A (Tc). The Rds On (Max) @ Id, Vgs is 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V. The Power-Max is 20.2W, 40W. The package/case is 8-PowerWDFN and the supplier device package is 8-PowerPair. The Gate Charge (Qg) (Max) @ Vgs is 10.5nC @ 4.5V, 23.1nC @ 4.5V. The Input Capacitance (Ciss) (Max) @ Vds is 1000pF @ 15V, 2425pF @ 15V. The Temperature Range-Operating is -55°C ~ 150°C (TJ). The ECCN for this product is EAR99. The HTSUS is 8541.29.0095 and the Mfr is Vishay Siliconix. Other names for this product include SIZ988DT-T1-GE3CT, SIZ988DT-T1-GE3-ND, SIZ988DT-T1-GE3TR, and SIZ988DT-T1-GE3DKR. The base product number is SIZ988.