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SQ2337ES-T1_BE3

Part No SQ2337ES-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 40 V
Power Dissipation (Max) 3W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SQ2337
Other Names 742-SQ2337ES-T1_BE3DKR,742-SQ2337ES-T1_BE3CT,742-SQ2337ES-T1_BE3TR
Standard Package 3,000
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277789-SQ2337ES-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQ2337ES-T1_BE3 CAD Model

Description

The Vishay Siliconix SCR 1277789-SQ2337ES-T1_BE3 is a P-channel MOSFET transistor that has a drain to source voltage (Vdss) of 80 V and a continuous drain current (Id) of 2.2A (Tc) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Power Dissipation (Max): 3W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99
  • RoHS: non-compliant
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4096 $51.2000
300+ $0.3361 $100.8300
465+ $0.3256 $151.4040
635+ $0.3151 $200.0885
825+ $0.3046 $251.2950
1,100+ $0.2731 $300.4100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,043 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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