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IPA65R600C6XKSA1

Part No IPA65R600C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 210μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1045743-IPA65R600C6XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA65R600C6XKSA1 CAD Model

Description

The IPA65R600C6XKSA1 is an electronic component manufactured by Infineon Technologies.

  • Supply and Demand Status: sufficient
  • Type: N-Channel MOSFET
  • Ideal for: power supplies, motor drives, and lighting systems
  • Features: low on-resistance and a fast switching speed
  • Ideal for: high-frequency applications
  • Characteristics: highly reliable
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.0741 $66.4446
13+ $9.0864 $118.1232
20+ $8.8023 $176.0460
28+ $8.5181 $238.5068
36+ $8.2352 $296.4672
47+ $7.3828 $346.9916
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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