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Same model may have multiple batches, images only for reference.
SQ2348ES-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ2348ES-T1_GE3

Part No SQ2348ES-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A SOT-23
Datasheet
SQ2348ES-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 540pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1101697-SQ2348ES-T1_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ2348ES-T1_GE3 CAD Model

Description

The SQ2348ES-T1_GE3 is an N-channel MOSFET manufactured by Vishay.

  • Power Dissipation (Max): 3W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: TO-236
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 24 mOhm @ 12A, 10V
  • Supply and Demand Status: Sufficient.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 70 pcs
Order Increment : 3000 pcs
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