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SQ4153EY-T1_GE3

Part No SQ4153EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 6 V
Power Dissipation (Max) 7.1W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SQ4153
Other Names SQ4153EY-T1_GE3DKR,SQ4153EY-T1_GE3TR,SQ4153EY-T1_GE3CT,SQ4153EY-T1_GE3
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277823-SQ4153EY-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ4153EY-T1_GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a P-Channel transistor designed for use in automotive applications.

  • Transistor Series: TrenchFET®
  • Certification: AEC-Q101 certified
  • Drain to Source Voltage: 12 V
  • Continuous Drain Current: 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Power Dissipation: 7.1W (Tc)
  • Packaging: 8-SOIC (0.154", 3.90mm Width)
  • Standard Package: 2,500
  • ECCN: EAR99
  • HTSUS: Classified under 8541.29.0095
  • Availability: in the open market

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8086 $52.5590
155+ $0.6635 $102.8425
235+ $0.6427 $151.0345
325+ $0.6220 $202.1500
420+ $0.6013 $252.5460
560+ $0.5391 $301.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,154 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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