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SQ4920EY-T1_GE3 Real Image SQ4920EY-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.
SQ4920EY-T1_GE3 Real Image SQ4920EY-T1_GE3 Real Image
SQ4920EY-T1_GE3 Real Image SQ4920EY-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ4920EY-T1_GE3

Part No SQ4920EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8SO
Datasheet
SQ4920EY-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 14.5 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1465pF @ 15V
Maximum Power Dissipation 4.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1101713-SQ4920EY-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ4920EY-T1_GE3 CAD Model

Description

The SQ4920EY-T1_GE3 is a dual N-channel logic level gate FET manufactured by Vishay.

  • Channel Type: Dual N-channel
  • Gate Type: Logic Level
  • Mounting Type: SMD (SMT)
  • Packaging: Reel - TR
  • Maximum Power Dissipation: 4.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1465pF @ 15V
  • Maximum Rds On @ Id,Vgs: 14.5 mOhm @ 6A, 10V
  • Category: Discrete Semiconductor Product
  • Status: Active
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
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115+ $1.0085 $115.9775
180+ $0.9771 $175.8780
245+ $0.9456 $231.6720
320+ $0.9141 $292.5120
425+ $0.8195 $348.2875
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