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SQ4940AEY-T1-GE3

Part No SQ4940AEY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 8A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 24 mOhm @ 5.3A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 741pF @ 20V
Maximum Power Dissipation 4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 212079-SQ4940AEY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQ4940AEY-T1-GE3 CAD Model

Description

The Vishay 346921 electronic component is an SQ4940AEY-T1-GE3 manufactured by Vishay.

  • Popularity: medium
  • Supply and Demand Status: limited
  • Win Source part number: 212079-SQ4940AEY-T1-GE3
  • Type: dual N-channel MOSFET
  • Feature: logic level gate
  • Temperature Range: -55°C to 175°C
  • Power Dissipation: 4W
  • Drain-Source Breakdown Voltage: 40V
  • Package: 8-SOIC case
  • Continuous Drain Current: 8A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5638 $50.7420
220+ $0.4627 $101.7940
335+ $0.4482 $150.1470
465+ $0.4337 $201.6705
600+ $0.4193 $251.5800
800+ $0.3759 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 173,652 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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