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Same model may have multiple batches, images only for reference.
SQD25N06-22L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD25N06-22L_GE3

Part No SQD25N06-22L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 25A TO252 / Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
SQD25N06-22L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1975pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 62W (Tc)
Rds On (Maximum) @ Id, Vgs 22 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-252, (D-Pak)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 772286-SQD25N06-22L_GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SQD25N06-22L
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SQD25N06-22L_GE3 CAD Model

Description

The SQD25N06-22L_GE3 is a MOSFET transistor from Vishay Siliconix's TrenchFET series.

  • Channel Type: N
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 62W (Tc)
  • Maximum Rds On: 22 mOhm @ 20A, 10V
  • Drain-Source Voltage: 60V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 50nC @ 10V
  • Input Capacitance: 1975pF @ 25V
  • Mounting Type: SMD
  • Packaging: Reel
  • Alternative Parts: STD35NF06, STD35NF06T4, FDD5680-NF40, STD30NE06LT4

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330+ $0.9225 $304.4250
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