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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 25 V
Power Dissipation (Max) 71W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD40081
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQD40081EL_GE3TR,SQD40081EL_GE3DKR,SQD40081EL_GE3CT
Standard Package 2,000
Win Source Part Number 970295-SQD40081EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQD40081EL_GE3 CAD Model

Description

The Vishay Siliconix SQD40081EL_GE3 is a P-channel MOSFET with a drain to source voltage of 40V and a continuous drain current of 50A @ 25°C.

  • Maximum On-Resistance (Rds On): 8.5mOhm @ 25A and 10V
  • Gate Charge: 210nC @ 10V
  • Input Capacitance: 9950pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 71W @ Tc
  • Series: Automotive, AEC-Q101, TrenchFET™
  • Suitable for: Discrete semiconductor products such as FETs and MOSFETs

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2230 $61.1500
100+ $1.1456 $114.5600
155+ $1.1069 $171.5695
220+ $1.0295 $226.4900
285+ $0.9909 $282.4065
355+ $0.9521 $337.9955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,327 pieces
MOQ: 50 pcs
Order Increment : 1 pieza
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