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Same model may have multiple batches, images only for reference.
SQD40N10-25-T4_GE3
Same model may have multiple batches, images only for reference.

SQD40N10-25-T4_GE3

Part No SQD40N10-25-T4_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD40N10-25-T4_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD40
Other Names 742-SQD40N10-25-T4_GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277787-SQD40N10-25-T4_GE3
Ultra Librarian 3D Model Ultra Librarian SQD40N10-25-T4_GE3 CAD Model

Description

The SQD40N10-25-T4_GE3 MOSFET is a N-Channel FET with a maximum voltage of 100V and a maximum current of 40A.

  • Rds On (Max): 25mOhm @ 40A and 10V
  • Vgs(th) (Max): 2.5V @ 250µA
  • Gate Charge (Qg) (Max): 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max): 3380 pF @ 25 V
  • Series: TrenchFET®
  • Applications: automotive applications
  • Standard: AEC-Q101
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier: Vishay Siliconix

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