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Same model may have multiple batches, images only for reference.
SQJQ980EL-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJQ980EL-T1_GE3

Part No SQJQ980EL-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJQ980EL-T1_GE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Rds On (Max) @ Id, Vgs 13.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1995pF @ 40V
Power - Max 187W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Base Product Number SQJQ980
Other Names SQJQ980EL-T1_GE3CT,SQJQ980EL-T1_GE3TR,SQJQ980EL-T1_GE3,SQJQ980EL-T1_GE3DKR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278532-SQJQ980EL-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ980EL-T1_GE3 CAD Model

Description

The SQJQ980EL-T1_GE3 is a dual N-channel MOSFET transistor array that has a drain to source voltage of 80V and a continuous drain current of 36A (Tc) @ 25°C.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Maximum Rds On: 13.5mOhm @ 5A and 10V
  • Maximum Gate Charge: 36nC @ 10V
  • Input Capacitance: 1995pF @ 40V
  • Vgs(th): 2.5V @ 250µA
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6544 $50.4336
46+ $2.1780 $100.1880
72+ $2.1099 $151.9128
98+ $2.0418 $200.0964
127+ $1.9738 $250.6726
170+ $1.7696 $300.8320
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Availability: 1,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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