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Same model may have multiple batches, images only for reference.
SQD50N06-07L-GE3
Same model may have multiple batches, images only for reference.

SQD50N06-07L-GE3

Part No SQD50N06-07L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252-3
Continuous Drain Current (ID) 50 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 7.6 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Fall Time 7 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 5.57 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 136 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Radiation Hardening No
Rds On Max 7.6 mΩ
REACH SVHC Unknown
Rise Time 13 ns
RoHS Compliant
Threshold Voltage 2 V
Turn-Off Delay Time 42 ns
Turn-On Delay Time 12 ns
Win Source Part Number 1095807-SQD50N06-07L-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SQD50N06-07L-GE3 CAD Model

Description

The SQD50N06-07L-GE3 MOSFET from Vishay is a surface mount device.

  • Drain-to-source voltage (Vdss): 60 V
  • Continuous drain current (ID): 50 A
  • Drain-to-source resistance: 7.6 mΩ
  • Input capacitance: 5.57 nF
  • Maximum power dissipation: 136 W
  • Maximum operating temperature: 175 °C
  • Case/Package: TO-252-3
  • RoHS: Compliant

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