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Same model may have multiple batches, images only for reference.
SQD90P04-9M4L_GE3
Same model may have multiple batches, images only for reference.

SQD90P04-9M4L_GE3

Part No SQD90P04-9M4L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 90A TO252AA
Datasheet
SQD90P04-9M4L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 155nC @ 10V
Max Input Capacitance 6675pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101736-SQD90P04-9M4L_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQD90P04-9M4L_GE3 CAD Model

Description

The Vishay SQD90P04-9M4L_GE3 MOSFET is a P-channel SMD (SMT) MOSFET that has a maximum power dissipation of 136W (Tc).

  • Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Case/Package: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 90A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 155nC @ 10V
  • Maximum Input Capacitance: 6675pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 9.4 mOhm @ 17A, 10V
  • Supply and Demand Status: Balanced

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208+ $1.4471 $300.9968
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