The SQJ409EP-T2_GE3 is a P-Channel MOSFET that belongs to the TrenchFET series.

• Application: Automotive
• Rating: AEC-Q101
• Drain to Source Voltage: 40V
• Continuous Drain Current: 60A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250μA
• Power Dissipation: 68W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25V
• Vgs (Max): ±20V
• Package: PowerPAK® SO-8
• Standard Package: 3,000
• Gate Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
• ECCN: EAR99
• HTSUS: 8541.29.0095