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SQJ411EP-T1_GE3 Real Image SQJ411EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.
SQJ411EP-T1_GE3 Real Image SQJ411EP-T1_GE3 Real Image
SQJ411EP-T1_GE3 Real Image SQJ411EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ411EP-T1_GE3

Part No SQJ411EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 60A PPAK SO-8
Datasheet
SQJ411EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features P-Channel 12 V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer Vishay
Series Automotive, AEC-Q101, TrenchFET®
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package PowerPAK® SO-8
Case / Package PowerPAK® SO-8
Family Name SQJ411
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQJ411EP-T1_GE3DKR, SQJ411EP-T1_GE3TR, SQJ411EP-T1_GE3CT
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 934910-SQJ411EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ411EP-T1_GE3 CAD Model

Description

The SQJ411EP-T1_GE3 PowerPAK SO-8 MOSFET from Vishay is a high-performance P-channel FET that is perfect for use in a wide range of electronic applications.

  • Manufacturer: Vishay
  • Product Name: SQJ411EP-T1_GE3
  • Drain to Source Voltage: 12V
  • Continuous Drain Current Rating: 60A
  • Maximum Power Dissipation: 68W @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Package: PowerPAK SO-8
  • Temperature Range: -55°C to 175°C
  • Applications: Power Management, Automotive, and Industrial

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Quantity Unit Price Ext. Price
3+ $20.3732 $61.1196
6+ $16.7165 $100.2990
10+ $16.1941 $161.9410
13+ $15.6717 $203.7321
17+ $15.1493 $257.5381
23+ $13.5821 $312.3883
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