The SQJ420EP-T1_GE3 is a N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

• Designed for: Use in Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single category
• Package: PowerPAK® SO-8
• Mounting: SMD (SMT) technology
• Maximum Drain to Source Voltage (Vdss): 40 V
• Maximum Continuous Drain Current (Id) @ 25°C: 30A (Tc)
• Maximum Rds On: 10mOhm @ Id, Vgs of 9.7A, 10V
• Vgs(th): 2.5V @ 250µA
• Maximum Power Dissipation: 45W (Tc)
• Gate Charge (Qg): 41 nC @ 10 V
• Input Capacitance (Ciss): 1860 pF @ 25 Vds
• Vgs (Max): ±20V
• Designed for Use in: Automotive, AEC-Q101, TrenchFET® series