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SQJ431AEP-T1_BE3

Part No SQJ431AEP-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 200-V (D-S) 175C MOSFE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 2000514-SQJ431AEP-T1_BE3
Win Source Part Number Cross
Manufacturer Vishay Siliconix
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Ultra Librarian 3D Model Ultra Librarian SQJ431AEP-T1_BE3 CAD Model

Description

The Vishay Siliconix P-channel MOSFET is a single FET designed for use in discrete semiconductor products.

  • Channel Type: P-Channel MOSFET
  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id): 9.4A (Tc) @ 25°C
  • Technology: TrenchFET
  • Application: Automotive
  • Packaging: Tape & Reel (TR), Cut Tape (CT), and Digi-Reel®
  • Cross-Reference: Yes
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2152 $60.7600
120+ $0.9972 $119.6640
180+ $0.9660 $173.8800
250+ $0.9349 $233.7250
320+ $0.9037 $289.1840
430+ $0.8101 $348.3430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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