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SQJ456EP-T1-GE3

Part No SQJ456EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 32A PPAK SO-8 / Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3342pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 042845-SQJ456EP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SQJ456EP
Introduction Date August 25, 2009
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SQJ456EP-T1-GE3 CAD Model

Description

The Vishay SQJ456EP-T1-GE3 is an N-Channel MOSFET that is perfect for use in discrete semiconductor products.

  • Power Dissipation (max): 83W (Tc)
  • Family: SQJ456EP family
  • Drive Voltage (max Rds On, Min Rds On): 6V, 10V
  • Active Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • MOSFET: High-quality, reliable and affordable
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4879 $58.3427
32+ $3.6824 $117.8368
49+ $3.5673 $174.7977
67+ $3.4523 $231.3041
87+ $3.3372 $290.3364
116+ $2.9919 $347.0604
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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