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SSM6N43FU

Part No SSM6N43FU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.5A US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 630 mOhm @ 200mA, 5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.23nC @ 4V
Max Input Capacitance 46pF @ 10V
Maximum Power Dissipation 200mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 193173-SSM6N43FU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6N43FU CAD Model

Description

The SSM6N43FU is a dual N-channel logic level gate MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: Balanced
  • Description: This MOSFET is highly reliable and has a low on-resistance. It is suitable for use in various applications such as power management, motor control, and LED lighting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
615+ $0.0942 $57.9330
1,495+ $0.0773 $115.5635
2,315+ $0.0748 $173.1620
3,190+ $0.0725 $231.2750
4,120+ $0.0701 $288.8120
5,515+ $0.0628 $346.3420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 615 pcs
Order Increment : 1 pcs
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