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SQJ912AEP-T1_GE3

Part No SQJ912AEP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 30A PPAK SO-8 / Trans MOSFET N-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET
Packaging Reel package
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 30A
Rds On (Maximum) @ Id, Vgs 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1835pF @ 20V
Power - Max 48W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package PowerPAK SO-8 Dual
Manufacturer Package PowerPAK SO-8 Dual
Win Source Part Number 795331-SQJ912AEP-T1_GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SQJ912AEP
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SQJ912AEP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ912AEP-T1_GE3 is an automotive-grade TrenchFET FET type.

  • FET Type: Dual 2 N-Channel
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Power: 48W
  • Package: PowerPAK SO-8 Dual
  • Mounting: SMD
  • Drain Source Voltage: 40V
  • Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1835pF @ 20V
  • Rds On (Maximum) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2029

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8498 $59.4860
170+ $0.6973 $118.5410
260+ $0.6754 $175.6040
355+ $0.6537 $232.0635
460+ $0.6319 $290.6740
615+ $0.5666 $348.4590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,100 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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