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Same model may have multiple batches, images only for reference.
SQJ980AEP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ980AEP-T1_GE3

Part No SQJ980AEP-T1_GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 75V POWERPAK SO8
Datasheet
SQJ980AEP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 35V
Power - Max 34W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TA)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJ980
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 848837-SQJ980AEP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ980AEP-T1_GE3 CAD Model

Description

The 848837-SQJ980AEP-T1_GE3 is a dual N-Channel MOSFET array designed for automotive applications.

  • Drain-to-Source Voltage: 75V
  • Continuous Drain Current: 17A
  • On-Resistance: 50mOhm @ 3.8A and 10V
  • Gate Charge: 21nC @ 10V
  • Input Capacitance: 790pF @ 35V
  • Package Type: PowerPAK SO-8 Dual
  • Temperature Range: -55°C to 175°C
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8681 $60.7670
165+ $0.7123 $117.5295
255+ $0.6902 $176.0010
350+ $0.6678 $233.7300
450+ $0.6456 $290.5200
600+ $0.5788 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,440 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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