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SQJA26EP-T1_GE3

Part No SQJA26EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE N-CHANNEL 30 V (D-S) / N-Channel 30 V 410A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 410A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.77mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9778 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357302-SQJA26EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA26EP-T1_GE3 CAD Model

Description

The 1357302-SQJA26EP-T1_GE3 is a single N-channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 410A
  • On-Resistance: 0.77mOhm @ 15A and 10V
  • Gate Voltage (for maximum on-resistance): 4.5V
  • Gate Threshold Voltage: 2.5V
  • Gate Charge: 195nC @ 10V
  • Mounting Type: Surface Mount
  • Package: PowerPAK SO-8
  • Product Status: Active
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.2981 $50.5582
54+ $1.8856 $101.8224
83+ $1.8267 $151.6161
114+ $1.7677 $201.5178
147+ $1.7088 $251.1936
196+ $1.5320 $300.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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