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Same model may have multiple batches, images only for reference.
SQJA46EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJA46EP-T1_GE3

Part No SQJA46EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJA46EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA46
Other Names SQJA46EP-T1_GE3DKR,SQJA46EP-T1_GE3TR,SQJA46EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277836-SQJA46EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA46EP-T1_GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a high-performance N-channel MOSFET that is ideal for use in a variety of applications.

  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 60A @ 25°C
  • Low On-Resistance: 3mOhm @ 10A and 10V
  • Package: Housed in a PowerPAK SO-8 package
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $85.9702 $85.9702
2+ $83.2836 $166.5672
3+ $80.5971 $241.7913
4+ $77.9105 $311.6420
5+ $69.8508 $349.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
Order Increment : 1 pcs
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