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SQJA68EP-T1_GE3

Part No SQJA68EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8L
Package / Case PowerPAK® SO-8L
Base Product Number SQJA68
Other Names SQJA68EP-T1_GE3CT,SQJA68EP-T1_GE3TR,SQJA68EP-T1_GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277839-SQJA68EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA68EP-T1_GE3 CAD Model

Description

The SQJA68EP-T1_GE3 MOSFET is a high-performance N-channel FET designed for use in automotive applications.

  • Maximum Drain to Source Voltage: 100V
  • Continuous Drain Current: 14A
  • Package: PowerPAK SO-8L
  • Maximum Power Dissipation: 45W
  • Gate Charge: 8nC
  • Input Capacitance: 280pF
  • Manufacturer: Vishay
  • Series: TrenchFET
  • Standard Compliance: AEC-Q101

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6774 $50.8050
160+ $0.6346 $101.5360
245+ $0.6131 $150.2095
355+ $0.5703 $202.4565
460+ $0.5488 $252.4480
570+ $0.5274 $300.6180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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