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SQJB70EP-T1_GE3

Part No SQJB70EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 N-CH 100V POWERPAK SO8 / Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Rds On (Max) @ Id, Vgs 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Power - Max 27W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Case / Package PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB70
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQJB70EP-T1_GE3CT,SQJB70EP-T1_GE3TR,SQJB70EP-T1_GE3DKR
Standard Package 3,000
Win Source Part Number 1324670-SQJB70EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB70EP-T1_GE3 CAD Model

Description

The SQJB70EP-T1_GE3 is a dual N-channel MOSFET transistor array from Vishay Siliconix.

  • Package: PowerPAK SO-8 Dual
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Power - Max: 27W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7789 $50.6285
160+ $0.6391 $102.2560
245+ $0.6191 $151.6795
335+ $0.5991 $200.6985
435+ $0.5792 $251.9520
580+ $0.5193 $301.1940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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