The SQM120N02-1M3L_GE3, manufactured by Vishay Siliconix, is an N-channel MOSFET (Metal Oxide) type electronic component that has a drain to source voltage (Vdss) of 20V.

• Transistor Type: N-Channel MOSFET
• Drain to Source Voltage (Vdss): 20V
• Supplier Device Package: TO-263 (D2Pak)
• Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Power Dissipation: 375W (Tc)
• Gate Charge (Qg): 290nC @ 10V
• Input Capacitance (Ciss): 14500pF @ 10V
• Current Continuous Drain (Id): 120A (Tc) @ 25°C
• Rds On (Maximum) @ Id, Vgs: 1.3mOhm @ 40A, 10V
• Gate Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Popularity: Medium
• Supply and Demand Status: Limited
• Manufacturer Pack Quantity: 800
• MSL Level: 1 (unlimited)
• Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
• Maximum Vgs: ±20V