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SQM40031EL_GE3

Part No SQM40031EL_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 120A D2PAK / P-Channel 40 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Packaging Reel - TR
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 800 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 39000 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263 (D2Pak)
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM40031
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SQM40031EL_GE3CT,SQM40031EL_GE3DKR,SQM40031EL_GE3TR,SQM40031EL_GE3-ND
Standard Package 800
Win Source Part Number 1324671-SQM40031EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQM40031EL_GE3 CAD Model

Description

The SQM40031EL_GE3 from Vishay Siliconix is a P-channel MOSFET transistor.

  • Drain to Source Voltage: 40V
  • Current Rating: 120A @ 25°C
  • Maximum On-Resistance: 3mOhm @ 10V
  • Gate Charge: 800nC @ 10V
  • Package: Surface Mount
  • Case: TO-263 (D2Pak)
  • ECCN: EAR99
  • Maximum Operating Temperature: 175°C
  • Maximum Input Capacitance: 39000pF @ 25V
  • MSL Level: 1 (Unlimited)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1281 $50.0496
35+ $2.9301 $102.5535
53+ $2.8311 $150.0483
76+ $2.6331 $200.1156
99+ $2.5341 $250.8759
124+ $2.4352 $301.9648
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,400 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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