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Same model may have multiple batches, images only for reference.
SQP120N06-06_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQP120N06-06_GE3

Part No SQP120N06-06_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQP120N06-06_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6495 pF @ 25 V
Power Dissipation (Max) 175W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SQP120
Other Names SQP120N06-06_GE3CT,SQP120N06-06_GE3DKR,SQP120N06-06_GE3TR,SQP120N06-06_GE3TRINACTIVE,SQP120N06-06_GE3CT,SQP120N06-06_GE3DKR,SQP120N06-06_GE3TR,SQP120N06-06_GE3DKRINACTIVE
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277806-SQP120N06-06_GE3
Ultra Librarian 3D Model Ultra Librarian SQP120N06-06_GE3 CAD Model

Description

The SQP120N06-06_GE3 is a discrete semiconductor product manufactured by Vishay Siliconix.

  • Type: N-channel MOSFET
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 119A @ 25°C
  • Applications: power supplies, motor control, and lighting
  • Maximum Power Dissipation: 175W @ Tc
  • Gate Charge: 145nC @ 10V

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