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SQP50P03-07_GE3

Part No SQP50P03-07_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A TO220AB  /  P-Channel 30 V 50A (Tc) 150W (Tc) Through Hole TO-220AB
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tube
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5380 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SQP50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SQP50P03-07_GE3TRINACTIVE,SQP50P03-07_GE3TR-ND,SQP50P03-07_GE3DKR,SQP50P03-07_GE3DKR-ND,SQP50P03-07_GE3CT-ND,SQP50P03-07_GE3TR,SQP50P03-07_GE3CT,SQP50P03-07_GE3DKRINACTIVE
Standard Package 500
Win Source Part Number 965485-SQP50P03-07_GE3
Ultra Librarian 3D Model Ultra Librarian SQP50P03-07_GE3 CAD Model

Description

This Vishay Siliconix MOSFET (metal oxide) is a P-channel type with a maximum drain to source voltage of 30 V and a continuous drain current of 50 A (Tc) @ 25°C.

  • Type: MOSFET (Metal Oxide)
  • Channel Type: P-Channel
  • Drain to Source Voltage (Max): 30 V
  • Continuous Drain Current: 50 A (Tc) @ 25°C
  • On-Resistance (Max): 7mOhm @ 30A and 10V
  • Gate Charge: 155 nC @ 10 V
  • Input Capacitance: 5380 pF @ 25 Vds
  • Technology: TrenchFET
  • Package: TO-220-3
  • Mounting: Through-Hole
  • Standard Package: 500
  • Supplier Device Package: TO-220AB
  • Temperature Range: -55°C to 175°C (TJ)

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