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SQR40020ER_GE3

Part No SQR40020ER_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252 (DPAK) Reverse Lead
Package / Case TO-252-4, DPak (3 Leads + Tab)
Base Product Number SQR40020
Other Names SQR40020ER_GE3CT,SQR40020ER_GE3DKR,SQR40020ER_GE3TR
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277853-SQR40020ER_GE3
Ultra Librarian 3D Model Ultra Librarian SQR40020ER_GE3 CAD Model

Description

The Vishay SQR40020ER_GE3 is an N-channel MOSFET transistor with a Win Source Part Number of 1277853-SQR40020ER_GE3.

  • Mounting Technology: Surface Mount Technology (SMT)
  • Case/Package: TO-252-4, DPak (3 Leads + Tab)
  • Drain-Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA
  • Power Dissipation: 107W
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Popularity: High
  • Applications: Power management, automotive, and industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.5979 $50.3706
34+ $2.9521 $100.3714
53+ $2.8598 $151.5694
73+ $2.7676 $202.0348
94+ $2.6753 $251.4782
126+ $2.3986 $302.2236
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,886 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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