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SQSA80ENW-T1_GE3

Part No SQSA80ENW-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1358 pF @ 40 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SQSA80
Other Names SQSA80ENW-T1_GE3DKR,SQSA80ENW-T1_GE3CT,SQSA80ENW-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277856-SQSA80ENW-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQSA80ENW-T1_GE3 CAD Model

Description

The SQSA80ENW-T1_GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Series: Automotive, AEC-Q101, TrenchFET
  • Maximum Drain to Source Voltage: 80V
  • Continuous Drain Current: 18A (Tc)
  • Maximum Rds On: 21mOhm @ 10A, 10V
  • Gate Charge: 21 nC @ 10V
  • Input Capacitance: 1358pF @ 40Vds
  • Supplier Device Package: PowerPAK 1212-8
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7766 $50.4790
160+ $0.6372 $101.9520
245+ $0.6173 $151.2385
335+ $0.5974 $200.1290
435+ $0.5775 $251.2125
580+ $0.5177 $300.2660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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