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SQV120N10-3M8_GE3

Part No SQV120N10-3M8_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 28-SOIC
Package / Case 28-SOIC (0.295", 7.50mm Width)
Base Product Number SQV120
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277805-SQV120N10-3M8_GE3
Ultra Librarian 3D Model Ultra Librarian SQV120N10-3M8_GE3 CAD Model

Description

The Vishay Siliconix SQV120N10-3M8_GE3 is an N-channel MOSFET transistor that is a part of the Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single family. It is designed for use in various electronic circuits and has a maximum drain to source voltage of 100V. This transistor has a maximum continuous drain current of 120A at 25°C and a maximum Rds On of 3.8mOhm at 20A and 10V. It has a maximum gate charge of 190 nC at 10V and a maximum input capacitance of 7230 pF at 25V. It has a maximum power dissipation of 250W and can operate in a temperature range of -55°C to 175°C (TJ). It is an obsolete product and has been discontinued.

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