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Same model may have multiple batches, images only for reference.
SUD50N024-09P-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N024-09P-E3

Part No SUD50N024-09P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 22V 49A TO252
Datasheet
SUD50N024-09P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 22V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1300pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.5W (Ta), 39.5W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1005927-SUD50N024-09P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N024-09P-E3 CAD Model

Description

The Vishay SUD50N024-09P-E3 is an N-channel MOSFET that has a drain-source breakdown voltage of 22V and a continuous drain current at 25°C of 49A (Tc).

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 9.5 mOhm @ 20A, 10V
  • Suitable for use in: various applications such as discrete semiconductor products

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