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Same model may have multiple batches, images only for reference.
SUD50N04-16P Real Image
Same model may have multiple batches, images only for reference.

SUD50N04-16P

Part No SUD50N04-16P
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 9.8A TO252
Datasheet
SUD50N04-16P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 9.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1655pF @ 20V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.1W (Ta), 35.7W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 057006-SUD50N04-16P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N04-16P CAD Model

Description

The Vishay 057006-SUD50N04-16P is a MOSFET transistor with an N-channel polarity and a drain-source breakdown voltage of 40V.

  • Continuous Drain Current: 9.8A @ 25°C
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On: 16 mOhm @ 15A and 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Package: TO-252 (D-Pak)
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 3.1W (Ta) and 35.7W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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