The SUM110N03-03P is a power MOSFET from Vishay Siliconix. It is an N-channel MOSFET designed for high-efficiency power switching applications. This device offers a low on-resistance and gate charge, contributing to reduced power losses and improved efficiency in power conversion systems. Its robust design ensures reliable operation in demanding environments.

Applications

• Synchronous rectification in AC/DC power supplies
• DC/DC converters
• Motor control
• Load switching
• Power management in portable devices

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• TrenchFET® Power MOSFET technology
• 100% Rg tested
• Compliant to RoHS directive 2011/65/EU

Benefits

• Improved energy efficiency due to low RDS(on) and Qg, reducing power losses and heat generation.
• Enhanced system reliability with robust design and stable performance under varying operating conditions.
• Simplified thermal management due to reduced power dissipation.
• Smaller and lighter power supply designs can be achieved due to high power density.
• Environmentally friendly due to RoHS compliance.

Technical Specifications

The SUM110N03-03P features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 110A. Its on-resistance (RDS(on)) is typically 3 mΩ at a gate-source voltage (VGS) of 10V. The gate charge (Qg) is typically 35 nC. It is available in a PowerPAK® SO-8 single package, optimized for thermal performance and space efficiency. This MOSFET is designed to operate within a temperature range of -55°C to +175°C.

The low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses. The TrenchFET technology further enhances the device's performance by providing a higher cell density and lower gate resistance. The 100% Rg tested feature ensures gate resistance stability, which is critical for high-frequency switching applications. The device's thermal resistance allows for efficient heat dissipation, enabling reliable operation at higher power levels. The SUM110N03-03P is commonly used in synchronous rectification circuits in power supplies, where it improves efficiency by replacing traditional rectifier diodes with a MOSFET that exhibits lower voltage drop and power loss.