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Same model may have multiple batches, images only for reference.
SUM110N04-04-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM110N04-04-E3

Part No SUM110N04-04-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 110A D2PAK
Datasheet
SUM110N04-04-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1104109-SUM110N04-04-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUM110N04-04-E3 CAD Model

Description

The Vishay 1104109-SUM110N04-04-E3 is a MOSFET electronic component designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 110A
  • Power Dissipation: 3.75W (Ta) or 250W (Tc)
  • Channel Type: N-Channel
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V
  • Maximum Input Capacitance: 6800pF @ 25V
  • Package: TO-263 (D2Pak)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Alternative Parts: STB100NF04T4, SUB75N04-05L, and SUB75N04-05L-E3

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