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Same model may have multiple batches, images only for reference.
SUM110N06-3M9H-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM110N06-3M9H-E3

Part No SUM110N06-3M9H-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 110A D2PAK
Datasheet
SUM110N06-3M9H-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 15800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3.75W (Ta), 375W (Tc)
Rds On (Maximum) @ Id, Vgs 3.9 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (D2Pak)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Homepage www.vishay.com
Win Source Part Number 756979-SUM110N06-3M9H-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SUM110N06
Introduction Date February 14, 2005
Country of Origin China
Halogen Free Unknown
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SUM110N06-3M9H-E3 CAD Model

Description

The Vishay SUM110N06-3M9H-E3 is a MOSFET transistor that features a current rating of 110A and a maximum drain-source voltage of 60V.

  • Gate-Source Voltage: ±20V
  • Power Dissipation: 3.75W
  • Channel Type: N
  • Maximum On-Resistance: 3.9 mOhm @ 30A, 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Description: Designed for use in a variety of applications.
  • Features: A reliable and efficient transistor that is perfect for use in a wide range of applications.

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20+ $5.9613 $119.2260
30+ $5.7750 $173.2500
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72+ $4.8436 $348.7392
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