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SUM120N04-1M7L-GE3

Part No SUM120N04-1M7L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 285nC @ 10V
Max Input Capacitance 11685pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1104115-SUM120N04-1M7L-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUM120N04-1M7L-GE3 CAD Model

Description

The Vishay SUM120N04-1M7L-GE3 is an N-Channel MOSFET that is designed for use in various discrete semiconductor applications.

  • Manufacturer: Vishay
  • Product Name: SUM120N04-1M7L-GE3
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Mounting Technology: Surface Mount (SMT)
  • Package: TO-263 (D2Pak)
  • Maximum Power Dissipation: 375W (Tc)
  • Maximum Rds On: 1.7 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 285nC @ 10V
  • Maximum Input Capacitance: 11685pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Packaging: Reel
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5292 $58.7628
22+ $5.3569 $117.8518
34+ $5.1894 $176.4396
46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 898 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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