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Same model may have multiple batches, images only for reference.
SUM40010EL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUM40010EL-GE3

Part No SUM40010EL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUM40010EL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11155 pF @ 30 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM40010
Other Names SUM40010EL-GE3CT,SUM40010EL-GE3TR,SUM40010EL-GE3DKR
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277691-SUM40010EL-GE3
Ultra Librarian 3D Model Ultra Librarian SUM40010EL-GE3 CAD Model

Description

The SUM40010EL-GE3 MOSFET from Vishay Siliconix is a N-Channel FET.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 230nC @ 10V
  • Rds On (Max): 1.6mOhm @ 30A, 10V
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Series: ThunderFET®
  • Package: Tape & Reel
  • Standard Package: 800

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Quantity Unit Price Ext. Price
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29+ $3.4861 $101.0969
45+ $3.3772 $151.9740
62+ $3.2682 $202.6284
80+ $3.1593 $252.7440
106+ $2.8325 $300.2450
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Availability: 8,800 pieces
MOQ: 12 pcs
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