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Same model may have multiple batches, images only for reference.
IXTQ60N20T IXYS
Same model may have multiple batches, images only for reference.

IXTQ60N20T

Part No IXTQ60N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 60A TO3P
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Trench
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4530 pF @ 25 V
Power Dissipation (Max) 500W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ60
Standard Package 30 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 608606-IXTQ60N20T
Ultra Librarian 3D Model Ultra Librarian IXTQ60N20T CAD Model

Description

The IXTQ60N20T is a single N-channel MOSFET transistor from the Trench series.

  • Category: Discrete Semiconductor Products
  • Segment: Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Package: Tube (30 pieces)
  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 60A @ 25°C
  • On-Resistance (Max): 40mOhm @ 30A, 10V
  • Gate Charge: 73nC @ 10V
  • Input Capacitance: 4530pF @ 25V
  • Temperature Range: -55°C to 175°C
  • Mounting Type: Through Hole
  • Package: TO-3P-3, SC-65-3
  • Status: Active
  • Manufacturer: IXYS

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6690 $50.7110
46+ $2.1899 $100.7354
71+ $2.1215 $150.6265
98+ $2.0531 $201.2038
126+ $1.9846 $250.0596
169+ $1.7793 $300.7017
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Availability: 270 pieces
MOQ: 19 pcs
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