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SUM40N10-30

Part No SUM40N10-30
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 100-V (D-S) 175 °C MOSFET
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Rohs State rohs
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Categories Uncategorized
Manufacturer Vishay
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 839201-SUM40N10-30
Ultra Librarian 3D Model Ultra Librarian SUM40N10-30 CAD Model

Description

The SUM40N10-30 is an N-Channel MOSFET from Vishay, designed for high-efficiency switching applications. This power MOSFET boasts a low on-resistance and fast switching speed, contributing to reduced power losses and improved overall system performance. It's engineered to withstand high levels of avalanche energy, enhancing its robustness and reliability in demanding circuits.

Applications

  • Synchronous rectification in AC-DC and DC-DC converters
  • Motor control applications
  • Uninterruptible Power Supplies (UPS)
  • Power inverters
  • High-frequency switching power supplies

Features

  • N-Channel MOSFET
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • High avalanche energy rating
  • Temperature resistant
  • Lead-free construction
  • RoHS compliant

Benefits

  • Improved Efficiency: Low on-resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation.
  • Faster Switching: Enables operation at higher frequencies, resulting in smaller and more cost-effective power supply designs.
  • Enhanced Reliability: High avalanche energy rating provides increased protection against voltage transients and inductive kickback.
  • Simplified Thermal Management: Reduced power dissipation simplifies heat sink requirements and lowers overall system cost.
  • Environmentally Friendly: Lead-free construction and RoHS compliance contribute to a greener and more sustainable product.

Specifications

The SUM40N10-30 features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 40A. Its typical on-resistance (RDS(on)) is 30 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically around 2-4V. This MOSFET is typically packaged in a TO-252 (DPAK) package for efficient heat dissipation. Its operating junction temperature ranges from -55°C to +175°C, ensuring reliable performance in a wide range of operating conditions. The device's gate charge is optimized for fast and efficient switching, minimizing switching losses. The SUM40N10-30 is designed for through-hole mounting onto a PCB.

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