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Same model may have multiple batches, images only for reference.
SUM50020EL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUM50020EL-GE3

Part No SUM50020EL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SUM50020EL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11113 pF @ 30 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM50020
Other Names SUM50020EL-GE3TR,SUM50020EL-GE3CT,SUM50020EL-GE3DKR
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277608-SUM50020EL-GE3
Ultra Librarian 3D Model Ultra Librarian SUM50020EL-GE3 CAD Model

Description

The Vishay TrenchFET SUM50020EL-GE3 is an N-channel MOSFET with a drain to source voltage of 60V.

  • Continuous Drain Current: 120A @ 25°C
  • Maximum On-Resistance: 2.1mOhm @ 30A and 10V
  • Temperature Range: -55°C to 175°C
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Suitable for: high power applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5291 $58.1693
56+ $2.0751 $116.2056
87+ $2.0103 $174.8961
119+ $1.9455 $231.5145
154+ $1.8806 $289.6124
206+ $1.6861 $347.3366
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 85 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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